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| SEMICONDUCTOR TECHNICAL DATA General Description KMB060N40BA N-Ch Trench MOSFET K This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply. J A L B F D P E R G FEATURES VDSS=40V, ID=60A. Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. N H Q C O M DIM MILLIMETERS _ A 9.95 + 0.05 _ 9.2 + 0.1 B 8.00 C _ 15.3 + 0.2 D _ E 4.9 + 0.2 F O 1.5 _ G 2.54 + 0.05 _ 0.80 + 0.05 H _ J 1.27 + 0.10 K 4.50 L 1.30 M 6.90 1.75 N O 4.40 _ 0.05 P 0.1 + 0.15 _ Q 2.4 + 0.1 R 2.0 MIN MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL VDSS VGSS N-Ch 40 20 60 A 100 100 153 69 W 3.1 150 -55 150 1.8 40 /W /W A mJ UNIT V V D2PAK Marking DC@TC=25 Pulsed (Note1) (Note2) ID IDP IS Drain to Source Diode Forward Current Single Pulsed Avalanche Energy Drain Power Dissipation @TC=25 @Ta=25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note1) (Note2) (Note3) (Note1) (Note2) KMB 060N40 BA Type Name EAS PD Tj Tstg RthJC RthJA Lot No Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1E 1E Pad of 2 oz copper. Note 3) L=42.5 H, IAS=60A, VDD=20V, VGS=10V, Starting Tj=25 PIN CONNECTION (TOP VIEW) D 2 2 1 1 3 3 G 2009. 1. 14 S Revision No : 0 1/4 KMB060N40BA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source ON Resistance Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Note 4) Pulse Test : Pulse width <300 VSD* , Duty cycle < 2% VGS=0V, IS=14A (Note4) 0.8 1.2 V VGS=10V VGS=5V Ciss Coss Crss Rg Qg* Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDD=20V, VGS=10V ID=1A, RG=6 (Note4) VDS=20V, VGS=10V, ID=14A (Note4) 5.7 5.4 16 14 55 14 ns f=1MHz VDS=20V, f=1MHz, VGS=0V 1280 250 125 1.5 25.4 13.8 nC pF BVDSS IDSS IGSS Vth RDS(ON)* gfs* VGS=0V, ID=250 A VGS=0V, VDS=24V VGS= 20V, VDS=0V 40 1 (Note4) (Note4) (Note4) 1.8 5.7 7.5 58 1 100 3 8.5 11 m S V A nA V ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL VDS=VGS, ID=250 A VGS=10V, ID=14A VGS=4.5V, ID=11A VDS=5V, ID=14A 2009. 1. 14 Revision No : 0 2/4 KMB060N40BA Drain to Source On Resistance RDS(ON) (m) Fig1. ID - VDS 100 4.5V Fig2. RDS(ON)-ID 20 16 12 VGS=4.5V Drain Current ID (A) 80 60 40 VGS=10, 5V 4.0V 8 VGS=10V 3.5V 20 3.0V 4 0 0 20 40 60 80 100 0 0 1 2 3 4 Drain to Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS VDS=5V Fig4. RDS(on) - Tj Normalized On-Resistance RDS(ON) 1.8 1.6 VGS=10V,ID=14A 100 Drain Current ID (A) 80 60 40 20 0 1 2 3 4 5 Tj=-55 C 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 VGS=4.5V,ID=11A Tj=125 C Tj=25 C 0 25 50 75 100 125 150 175 Gate to Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Normalized Gate to Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 Fig6. RDS(on) - VGS Drain to Source On-Resistance RDS(ON) (m) 25 ID=7A VGS=VDS, ID=250A 20 15 10 Tj=25 C Tj=125 C 5 2 4 6 8 10 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) Gate to Source Volatage VGS (V) 2009. 1. 14 Revision No : 0 3/4 KMB060N40BA Fig 8. C - VDS 2000 f=1MHz Fig7. ID - VSD 103 Drain Current ID (A) Capacitance (pF) 102 Tj=125 C Tj=-55 C 1500 Ciss 101 1000 100 Tj=25 C 500 Coss Crss 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 10 20 30 40 Source to Drain Forward Voltage VSD (V) Drain to Source Voltage VDS (V) Fig9. Safe Operation Area 103 Drain Current ID (A) RDS(ON) Limited 102 100us 101 1ms 10ms DC VGS= 10V SINGLE PULSE Tc= 25 C 100 10-1 10-1 100 101 102 Drain to Source Voltage VDS (V) Fig10. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 10 1 10 0 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE 10 -1 PDM t1 t2 10 -2 - Duty = t/T Tj(max) - Tc - RthJC = PD -4 10 10 -3 10 -2 10 -1 1 10 1 2009. 1. 14 Revision No : 0 4/4 |
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